TY - JOUR
T1 - Stress engineering for high-performance MOSFETs
AU - Uchida, Ken
N1 - Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2008
Y1 - 2008
N2 - Since the conventional strategy, namely scaling of device dimensions in ultimately scaled shorter-channel-length MOS transistors, is less effective to enhance transistor performance, another strategy is strongly demanded. Stress engineering is one of the most promising performance boosters for the ultimately scaled MOS transistors. In this paper, we will introduce the physical mechanisms of the drain current enhancement induced by stress. We will discuss the mechanisms based on the band structure modification by stress. The effectiveness of the stress engineering in future devices is also prospected.
AB - Since the conventional strategy, namely scaling of device dimensions in ultimately scaled shorter-channel-length MOS transistors, is less effective to enhance transistor performance, another strategy is strongly demanded. Stress engineering is one of the most promising performance boosters for the ultimately scaled MOS transistors. In this paper, we will introduce the physical mechanisms of the drain current enhancement induced by stress. We will discuss the mechanisms based on the band structure modification by stress. The effectiveness of the stress engineering in future devices is also prospected.
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U2 - 10.3131/jvsj2.51.301
DO - 10.3131/jvsj2.51.301
M3 - Article
AN - SCOPUS:49549102177
VL - 51
SP - 301
EP - 305
JO - Shinku/Journal of the Vacuum Society of Japan
JF - Shinku/Journal of the Vacuum Society of Japan
SN - 1882-2398
IS - 5
ER -