Stress engineering for high-performance MOSFETs

Ken Uchida

    研究成果: Article査読

    4 被引用数 (Scopus)

    抄録

    Since the conventional strategy, namely scaling of device dimensions in ultimately scaled shorter-channel-length MOS transistors, is less effective to enhance transistor performance, another strategy is strongly demanded. Stress engineering is one of the most promising performance boosters for the ultimately scaled MOS transistors. In this paper, we will introduce the physical mechanisms of the drain current enhancement induced by stress. We will discuss the mechanisms based on the band structure modification by stress. The effectiveness of the stress engineering in future devices is also prospected.

    本文言語English
    ページ(範囲)301-305
    ページ数5
    ジャーナルJournal of the Vacuum Society of Japan
    51
    5
    DOI
    出版ステータスPublished - 2008

    ASJC Scopus subject areas

    • 材料科学(全般)
    • 器械工学
    • 表面および界面
    • 分光学

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