Stress engineering in high-κ FETs for mobility and on-current enhancements

Masumi Saitoh, Shigeki Kobayashi, Ken Uchida

    研究成果: Article査読

    2 被引用数 (Scopus)

    抄録

    We present a systematic study of uniaxial/biaxial stress effects on low-field mobility and on-current in high-κ n/pFETs. It is found that mobility enhancement by strain in high-κ FETs is smaller than SiO2 FETs in low effective field because of remote Coulomb scattering caused by fixed charges inside high-κ films, while mobility enhancement by biaxial tensile strain in high-κ nFETs is greater than SiO2 nFETs in high effective field due to weaker surface roughness scattering in high-κ nFETs. In short-channel high-κ nFETs, better on-current improvement by biaxial tensile strain than in SiO2 nFETs is achieved as a result of both higher mobility enhancement and weaker velocity saturation. The optimum stress design for high-κ n/pFETs is also discussed, and it is concluded that the application of transverse tensile stress, in addition to conventional longitudinal stress, is essential for performance improvement of high-κ n/pFETs.

    本文言語English
    ページ(範囲)1451-1457
    ページ数7
    ジャーナルIEEE Transactions on Electron Devices
    56
    7
    DOI
    出版ステータスPublished - 2009 6 8

    ASJC Scopus subject areas

    • 電子材料、光学材料、および磁性材料
    • 電子工学および電気工学

    フィンガープリント

    「Stress engineering in high-κ FETs for mobility and on-current enhancements」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

    引用スタイル