Stress limited scaling in Ge2Sb2Te5

Robert E. Simpson, Milos Krbal, Paul J. Fons, Alexander V. Kolobov, Tomoya Uruga, Hajime Tanida, Junji Tominaga

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

The influence of stress on the phase change behaviour of Ge 2Sb2Te5 encapsulated by ZnSSiO2 and TiN is investigated using temperature dependent Extended X-ray Asbsorption Fines Structure and Ellipsometry to determine the crystallisation temperature. The encapsulation material surrounding the Ge2Sb2Te 5 has an increasingly dominant effect on the material's ability to change phase and can cause a profound increase in its crystallization temperature. We have experimentally shown that the increased crystallization temperature originates from compressive stress exerted from the encapsulation material. By minimizing the stress we have maintained the bulk crystallization temperature in Ge2Sb2Te5 films just 2 nm thick.

本文言語English
ホスト出版物のタイトルPhase-Change Materials for Memory and Reconfigurable Electronics Applications
ページ13-18
ページ数6
出版ステータスPublished - 2010 12月 1
外部発表はい
イベント2010 MRS Spring Meeting - San Francisco, CA, United States
継続期間: 2010 4月 52010 4月 9

出版物シリーズ

名前Materials Research Society Symposium Proceedings
1251
ISSN(印刷版)0272-9172

Other

Other2010 MRS Spring Meeting
国/地域United States
CitySan Francisco, CA
Period10/4/510/4/9

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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