Strong Coupling Nature of the Excitonic Insulator State in Ta2NiSe5

Koudai Sugimoto, Satoshi Nishimoto, Tatsuya Kaneko, Yukinori Ohta

研究成果: Article査読

56 被引用数 (Scopus)

抄録

We analyze the measured optical conductivity spectra using the density-functional-theory-based electronic structure calculation and density-matrix renormalization group calculation of an effective model. We show that, in contrast to a conventional description, the Bose-Einstein condensation of preformed excitons occurs in Ta2NiSe5, despite the fact that a noninteracting band structure is a band-overlap semimetal rather than a small band-gap semiconductor. The system above the transition temperature is therefore not a semimetal but rather a state of preformed excitons with a finite band gap. A novel insulator state caused by the strong electron-hole attraction is thus established in a real material.

本文言語English
論文番号247602
ジャーナルPhysical review letters
120
24
DOI
出版ステータスPublished - 2018 6月 14
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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