Strong Coupling Nature of the Excitonic Insulator State in Ta2NiSe5

Koudai Sugimoto, Satoshi Nishimoto, Tatsuya Kaneko, Yukinori Ohta

研究成果: Article

19 引用 (Scopus)

抜粋

We analyze the measured optical conductivity spectra using the density-functional-theory-based electronic structure calculation and density-matrix renormalization group calculation of an effective model. We show that, in contrast to a conventional description, the Bose-Einstein condensation of preformed excitons occurs in Ta2NiSe5, despite the fact that a noninteracting band structure is a band-overlap semimetal rather than a small band-gap semiconductor. The system above the transition temperature is therefore not a semimetal but rather a state of preformed excitons with a finite band gap. A novel insulator state caused by the strong electron-hole attraction is thus established in a real material.

元の言語English
記事番号247602
ジャーナルPhysical Review Letters
120
発行部数24
DOI
出版物ステータスPublished - 2018 6 14
外部発表Yes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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