Structural analysis of sol-gel-derived LaNiO3(100)/CeO2(100)/Si(100) heterostructures

Shinobu Fujihara, Shinichi Miyake, Toshio Kimura, Katsuhiko Inaba

研究成果: Article査読

1 被引用数 (Scopus)

抄録

LaNiO3(100)/CeO2(100)/Si(100) as a metal/insulator/semiconductor heterostructure was prepared by a sol-gel method with a spin-coating technique. The structure of each oxide layer was investigated by out-of-plane and in-plane X-ray diffraction analyses. The high degree of {100}-orientation of the CeO2 layers was obtained with higher heat treatment temperatures, 600-700°C. The in-plane measurements revealed that the CeO2 layers had a nonepitaxial structure in Spite of the deposition on the Si (100) substrates with good lattice compatibility. The LaNiO3 layers on the CeO2(100)/Si(100) also exhibited the preferential {100}-orientation without epitaxy. The crystallinity of the {100}-oriented grains in the LaNiO3 layers was higher than that in the CeO2 layers. The occurrence of the orientation was discussed in view of the interracial energies at each interface.

本文言語English
ページ(範囲)793-797
ページ数5
ジャーナルJournal of the Ceramic Society of Japan
109
1273
DOI
出版ステータスPublished - 2001 9

ASJC Scopus subject areas

  • セラミックおよび複合材料
  • 化学 (全般)
  • 凝縮系物理学
  • 材料化学

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