Structural and surface morphology changes in CuInSe2 thin films as a function of Cu/In ratio

P. Fons, S. Niki, A. Yamada, D. J. Tweet

研究成果: Conference article査読

抄録

Due to its high near bandedge absorption, CuInSe2 is considered to be one of the most promising solar cell materials. As CuInSe2 films are usually grown by metastable processes, the Cu/In ratio often deviates from the ideal ratio of unity. To investigate the structural and morphological changes induced by such stoichiometric variations we have grown a series of epitaxial CuInSe2 epitaxial thin films with varying Cu/In ratios by molecular beam epitaxy on GaAs(001) substrates from elemental sources at a growth temperature of 450 °C. Overall structural, microstructural and surface morphological changes were observed by X-ray diffraction, transmission electron microscopy, and atomic force microscopy, respectively. It was observed that as films deviated from stoichiometry, twinning occurred preferentially on the anion {1·1̄·2} planes.

本文言語English
ページ(範囲)9-14
ページ数6
ジャーナルMaterials Research Society Symposium - Proceedings
441
出版ステータスPublished - 1997 1 1
外部発表はい
イベントProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
継続期間: 1996 12 21996 12 6

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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