Structural change in sol-gel derived SiO2 films using ultraviolet irradiation

Hiroaki Imai, Hiroshi Hirashima, Koichi Awazu, Hideo Onuki

研究成果: Conference article査読

14 被引用数 (Scopus)

抄録

Photo-induced changes in structure of sol-gel derived SiO2 films were studied in order to explore a possibility of densification of sol-gel films at room temperature using energetic photons. Gel films which were produced on silicon substrates by dip-coating of sols prepared through hydrolysis of tetraethoxysilane were subjected to synchrotron radiation at room temperature. Structural changes of the gel films were investigated by ellipsometry and infrared spectroscopy. The radiation resulted in an increase in refractive index, a decrease in thickness of the films and a loss of OH groups. Increase in temperature of the films was less than 50 °C during the irradiation. The results indicate that ultraviolet lights induce densification of gel films through electronic excitation.

本文言語English
ページ(範囲)71-76
ページ数6
ジャーナルProceedings of SPIE - The International Society for Optical Engineering
2288
DOI
出版ステータスPublished - 1994 10 13
イベントSol-Gel Optics III 1994 - San Diego, United States
継続期間: 1994 7 241994 7 29

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • コンピュータ サイエンスの応用
  • 応用数学
  • 電子工学および電気工学

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