Structural changes of CIGS during deposition investigated by spectroscopic light scattering: A study on Ga concentration and Se pressure

K. Sakurai, R. Scheer, S. Nakamura, Y. Kimura, T. Baba, C. A. Kaufmann, A. Neisser, S. Ishizuka, A. Yamada, K. Matsubara, K. Iwata, P. Fons, H. Nakanishi, S. Niki

研究成果: Article査読

12 被引用数 (Scopus)

抄録

We have studied the three-stage deposition process of CuIn1-xGaxSe2 (CIGS) thin films using spectroscopic light scattering (SLS), under varied deposition conditions. The structural changes of CIGS films by (1) Ga composition, (2) Se supply and (3) low deposition temperature, were observed in situ by SLS. The largest changes in SLS profiles by the Ga composition was observed between x = 0.3 and 0.5. The SLS profiles changed significantly during stage 1 by varying the Se pressure, while the temperature profiles did not.

本文言語English
ページ(範囲)3377-3384
ページ数8
ジャーナルSolar Energy Materials and Solar Cells
90
18-19
DOI
出版ステータスPublished - 2006 11 23
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 再生可能エネルギー、持続可能性、環境
  • 表面、皮膜および薄膜

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