Structural changes of CuGaSe2 films during the three-stage process observed by spectroscopic light scattering

K. Sakurai, S. Nakamura, T. Baba, Y. Kimura, A. Yamada, S. Ishizuka, K. Matsubara, P. Fons, R. Scheer, H. Nakanishi, S. Niki

研究成果: Article査読

2 被引用数 (Scopus)

抄録

We have studied the three-stage deposition process of CuGaSe2 (CGS) films, with the help of spectroscopic light scattering (SLS) in situ monitoring method. During the second stage (i.e. deposition of Cu, Se), an abrupt change from a two-layered structure to a single layer, together with a significant increase in the grain size, was observed in the vicinity of the Cu/Ga=1.0 point. Shortly before this abrupt change, a characteristic peak was observed by SLS, accompanied by a definitive change in depth-oriented distribution of Cu and Na.

本文言語English
ページ(範囲)367-372
ページ数6
ジャーナルThin Solid Films
480-481
DOI
出版ステータスPublished - 2005 6月 1
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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