抄録
The structure of CuInSe2 single crystal films grown by molecular beam epitaxy on (001) GaAs substrates with the Cu/In ratio (γ) ranging from 0.62 to 1.53 has been characterized by a precise X-ray diffraction technique. It was found that these layers are highly oriented single crystals, and that the best chalcopyrite phase exists in a narrow composition range near γ = 0.98. The ratio of c-spacing to a-spacing (c/a ratio) reverses at γ = 0.98, indicating a stress cross over. In In-rich CIS the c/a ratio was found to be about 2.028 and the cell volume was estimated to be 98.4% of the standard value.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 45-48 |
| ページ数 | 4 |
| ジャーナル | Denshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory |
| 巻 | 60 |
| 号 | 3 |
| 出版ステータス | Published - 1996 1 1 |
| 外部発表 | はい |
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering