Structural tuning of wide-gap chalcopyrite CuGaSe2 thin films and highly efficient solar cells: Differences from narrow-gap Cu(In,Ga)Se 2

Shogo Ishizuka, Akimasa Yamada, Paul J. Fons, Hajime Shibata, Shigeru Niki

研究成果: Article査読

57 被引用数 (Scopus)

抄録

Simultaneous realization of high values of open circuit voltage (V oc), fill factor (FF), and energy conversion efficiency (η) in wide-gap CuGaSe2 (CGS) solar cells has long been one of the most challenging issues in the realm of chalcopyrite photovoltaics. In this communication, structural tuning of CGS thin films by means of controlling the amount of Se flux used during CGS film growth and improvements in solar cell performance (Voc->-0.9-V, FF->-0.7, and η->-10%) are demonstrated. Systematic variations in CGS film properties with the Se flux and correlation with device properties are shown. The unique CGS thin-film growth kinetics, which are different from narrow-gap Cu(In,Ga)Se2, are also presented and discussed. This development of double digit efficiency for CGS solar cells opens a new frontier for the broad application of a new class of chalcopyrite-based devices.

本文言語English
ページ(範囲)821-829
ページ数9
ジャーナルProgress in Photovoltaics: Research and Applications
22
7
DOI
出版ステータスPublished - 2014 7
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 再生可能エネルギー、持続可能性、環境
  • 凝縮系物理学
  • 電子工学および電気工学

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「Structural tuning of wide-gap chalcopyrite CuGaSe<sub>2</sub> thin films and highly efficient solar cells: Differences from narrow-gap Cu(In,Ga)Se <sub>2</sub>」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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