Studies of the correlation effect on the anderson-localized states in si: P by the mcscf method. i. uncompensated case

Mikio Eto, Hiroshi Kamimura

研究成果: Article査読

6 被引用数 (Scopus)

抄録

We study the correlation effect on the electronic states in the uncompensated Si:P system from the intermediate to the critical concentration region, by the Multi-Configuration Self Consistent Field (MCSCF) method recently developed by the present authors. By simulating the Si: P system by a cluster model, we clarify the features of the Anderson-localized states and the nature of the metal-insulator transition from a new standpoint. It is shown that most of electrons form spin-singlet pairs and remaining pairs are spin-triplet. Near the metal-insulator transition, MCSCF one-electron Orbitals near the Fermi level are extended and the correlation becomes weak by screening. This suggests the Mott-type transition.

本文言語English
ページ(範囲)2826-2835
ページ数10
ジャーナルJournal of the Physical Society of Japan
58
8
DOI
出版ステータスPublished - 1989 1 1
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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