Study on Al2O3/Ge interface formed by ALD directly on epitaxial Ge

Eriko Shigesawa, Ryotaro Matsuoka, Masashi Fukumoto, Ryosuke Sano, Kohei M. Itoh, Hiroshi Nohira, Kentarou Sawano

研究成果: Article査読

3 被引用数 (Scopus)


Germanium (Ge) has been attracting considerable attention as a high mobility channel material to enhance the performance of CMOS circuits. One of the most important issues for realization of practical Ge-MOSFET devices with superior performances is requirement to improve qualities of gate dielectric/Ge interfaces. In this work, Al2O3/Ge structures are fabricated by direct atomic layer deposition (ALD) on epitaxialy grown Ge. We indicate that ALD incubation time is fully suppressed by the ALD on a completely clean Ge surface created by Ge epitaxy on a Ge substrate. Moreover, x-ray photoelectron spectroscopy analyses reveal that unintentional formation of a GeO2 at the Al2O3/Ge interface can be almost avoided by the ALD on the epitaxial Ge whereas the interfacial GeO2 layer is present for samples exposed to the air before ALD. These results clearly indicate that direct ALD on epitaxial Ge is a very promising method to significantly improve Ge MOSFET performances.

ジャーナルSemiconductor Science and Technology
出版ステータスPublished - 2018 11月 20

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学


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