Sub-band structure engineering for advanced CMOS channels

Shin Ichi Takagi, T. Mizuno, T. Tezuka, N. Sugiyama, S. Nakaharai, T. Numata, J. Koga, K. Uchida

    研究成果: Article

    68 引用 (Scopus)

    抜粋

    This paper reviews our recent studies of novel CMOS channels based on the concept of sub-band structure engineering. This device design concept can be realized as strained-Si channel MOSFETs, ultra-thin SOI MOSFETs and Ge-on-Insulator (GOI) MOSFETs. An important factor for the electron mobility enhancement is the introduction of larger sub-band energy splitting between the 2- and 4-fold valleys on a (1 0 0) surface, which can be obtained in strained-Si and ultra-thin body channels. The electrical properties of strained-Si MOSFETs are summarized with an emphasis on strained-SOI structures. Also, the importance of the precise control of ultra-thin SOI thickness is pointed out from the experimental results of the SOI thickness dependence of mobility. Furthermore, it is shown that the increase in the sub-band energy splitting can also be effective in obtaining higher current drive of n-channel MOSFETs under ballistic transport regime. This suggests that the current drive enhancement based on MOS channel engineering utilizing strain and ultra-thin body structures can be extended to ultra-short channel MOSFETs dominated by ballistic transport.

    元の言語English
    ページ(範囲)684-694
    ページ数11
    ジャーナルSolid-State Electronics
    49
    発行部数5
    DOI
    出版物ステータスPublished - 2005 5 1

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

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    Takagi, S. I., Mizuno, T., Tezuka, T., Sugiyama, N., Nakaharai, S., Numata, T., Koga, J., & Uchida, K. (2005). Sub-band structure engineering for advanced CMOS channels. Solid-State Electronics, 49(5), 684-694. https://doi.org/10.1016/j.sse.2004.08.020