Suppression of geometric component of charge pumping current in thin film silicon on insulator metal-oxide-semiconductor field-effect transistors

Physics & Astronomy

• SOI (semiconductors) 93%
• metal oxide semiconductors 87%
• pumping 72%
• field effect transistors 67%
• retarding 65%
• insulators 62%
• silicon 46%
• thin films 44%
• pulses 42%
• electric potential 30%
• direct current 22%
• traps 21%
• causes 17%
• geometry 16%

Engineering & Materials Science

• MOSFET devices 100%
• Field effect transistors 91%
• Thin films 80%
• Semiconductor materials 75%
• Silicon 67%
• Electric potential 29%
• Geometry 17%