TY - JOUR
T1 - Suppression of indefinite peaks in InAs/GaAs quantum dot spectrum by low temperature capping in the indium-flush method
AU - Kumagai, N.
AU - Ohkouchi, S.
AU - Nakagawa, S.
AU - Nomura, M.
AU - Ota, Y.
AU - Shirane, M.
AU - Igarashi, Y.
AU - Yorozu, S.
AU - Iwamoto, S.
AU - Arakawa, Y.
PY - 2010/9
Y1 - 2010/9
N2 - We have investigated effects of growth temperature of thin GaAs capping layer in the initial stage of indium-flush process using atomic force microscopy and microscopic photoluminescence (μ-PL) methods. The shape of capped InAs quantum dot (QD) and its μ-PL properties are sensitive to the growth temperature of thin GaAs capping layer. In the case of the high temperature cap, the QD shape in initial capping stage is elongated along the [1 1 -0] direction, and μ-PL spectrum shows several peaks accompanied with indefinite peaks. On the other hand, the low temperature case, the QD shape is kept in isotropic and μ-PL spectrum shows distinctive emissions from excitonic states of the QD with suppressed indefinite peaks. These results indicate that the low temperature capping is effective to keep an isotropic shape of QD and suppress indefinite peaks.
AB - We have investigated effects of growth temperature of thin GaAs capping layer in the initial stage of indium-flush process using atomic force microscopy and microscopic photoluminescence (μ-PL) methods. The shape of capped InAs quantum dot (QD) and its μ-PL properties are sensitive to the growth temperature of thin GaAs capping layer. In the case of the high temperature cap, the QD shape in initial capping stage is elongated along the [1 1 -0] direction, and μ-PL spectrum shows several peaks accompanied with indefinite peaks. On the other hand, the low temperature case, the QD shape is kept in isotropic and μ-PL spectrum shows distinctive emissions from excitonic states of the QD with suppressed indefinite peaks. These results indicate that the low temperature capping is effective to keep an isotropic shape of QD and suppress indefinite peaks.
KW - Indium arsenide
KW - Molecular beam epitaxy
KW - Photoluminescence
KW - Self-assembled quantum dot
KW - Single photon emitters
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U2 - 10.1016/j.physe.2009.12.042
DO - 10.1016/j.physe.2009.12.042
M3 - Article
AN - SCOPUS:77957976788
SN - 1386-9477
VL - 42
SP - 2753
EP - 2756
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
IS - 10
ER -