Suppression of surface segregation of the phosphorous δ-doping layer by insertion of an ultra-thin silicon layer for ultra-shallow Ohmic contacts on n-type germanium

Michihiro Yamada, Kentarou Sawano, Masashi Uematsu, Kohei M Itoh

研究成果: Article

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We demonstrate the formation of abrupt phosphorus (P) δ-doping profiles in germanium (Ge) by the insertion of ultra-thin silicon (Si) layers. The Si layers at the δ-doping region significantly suppress the surface segregation of P during the molecular beam epitaxial growth of Ge and high-concentration active P donors are confined within a few nm of the initial doping position. The current-voltage characteristics of the P δ-doped layers with Si insertion show excellent Ohmic behaviors with low enough resistivity for ultra-shallow Ohmic contacts on n-type Ge.

元の言語English
記事番号132101
ジャーナルApplied Physics Letters
107
発行部数13
DOI
出版物ステータスPublished - 2015 9 28

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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