Surface and bulk-passivated large area multicrystalline silicon solar cells

K. Fukui, K. Okada, Y. Inomata, H. Takahashi, S. Fujii, Y. Fukawa, K. Shirasawa

研究成果: Article査読

10 被引用数 (Scopus)

抄録

We have investigated the surface and bulk passivation technique on large-area multicrystalline silicon solar cells, a large open-circuit voltage has been obtained for cells oxidized to passivate the surface and hydrogen annealed after deposition of silicon nitride film on both surfaces by plasma CVD method (P-SiN) to passivate the bulk. The texture surface like pyramid structure on multicrystalline silicon surface has been obtained uniformly using reactive ion etching (RIE) method. Combining these RIE method and passivation schemes, the conversion efficiency of 17.1% is obtained on 15 cm × 15 cm multicrystalline silicon solar cell. Phosphorus diffusion, BSF formation, passivation technique and contact metallization for low-cost process sequences are also described in this paper.

本文言語English
ページ(範囲)219-228
ページ数10
ジャーナルSolar Energy Materials and Solar Cells
48
1-4
DOI
出版ステータスPublished - 1997 11

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 再生可能エネルギー、持続可能性、環境
  • 表面、皮膜および薄膜

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