Surface and subsurface damages in nanoindentation tests of compound semiconductor InP

Jiwang Yan, Jun'Ichi Tamaki, Hongwei Zhao, Tsunemoto Kuriyagawa

研究成果: Article査読

5 被引用数 (Scopus)

抄録

Nanoindentation tests were conducted on single-crystal indium phosphide (InP) using a Vickers indenter and a spherical indenter over a wide load range. The resulting indents were examined using scanning electron microscopy, cross-sectional transmission electron microscopy and selected area diffraction. Effects of the indenter type and indentation load on the surface cracking behavior, load-displacement characteristics and subsurface damage were investigated. The results showed that the cracking behavior and critical load for crack generation depends strongly on the indenter geometry and orientation. Pop-in events occur during loading in the case of the spherical indenter, but not in the case of the Vickers indenter. It was demonstrated that dislocations dominate the deformation mechanism, and no phase transformation occurs. The indenter contact immediately causes a high-density dislocation region, below which extend slip bands. The stress field of the indented zone was simulated by the finite element method, and the stress concentration regions corresponded to the high-density dislocation regions.

本文言語English
論文番号105018
ジャーナルJournal of Micromechanics and Microengineering
18
10
DOI
出版ステータスPublished - 2008 10 1
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 材料力学
  • 機械工学
  • 電子工学および電気工学

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