Surface Modification of Polytetrafluoroethylene with ARF Excimer Laser Irradiation

Shingo inoue, Takeo Fujii, Voshiaki Ueno, Fumihiko kannari

研究成果: Article査読

2 被引用数 (Scopus)

抄録

Crystalline thin films of polytetrafluoroethylene were deposited on Si (100) wafers by F2 laser (157 nm) ablation. X-ray photoemission spectra indicated that the composition of deposited films was similar to the source material. The surface morphology of films deposited at room temperature contained numerous fibrous structures in size of 100~400 nm, but they were smoothed out at elevated wafer temperature of ~370 K. The refractive index was ~1.35 at 633 nm. Ionized fragments in the ablation plume were measured by a Faraday cup assembly, but their effect on the deposited films was not observed at the present ionization ratio.

本文言語English
ページ(範囲)389-396
ページ数8
ジャーナルJournal of Photopolymer Science and Technology
7
2
DOI
出版ステータスPublished - 1994

ASJC Scopus subject areas

  • ポリマーおよびプラスチック
  • 有機化学
  • 材料化学

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