Suspended quantum dot fabrication on a heavily doped silicon nanowire by suppressing unintentional quantum dot formation

Jun Ogi, Mohammad Adel Ghiass, Tetsuo Kodera, Yoshishige Tsuchiya, Ken Uchida, Shunri Oda, Hiroshi Mizuta

    研究成果: Article査読

    3 被引用数 (Scopus)

    抄録

    We aim at embedding a quantum dot on a suspended nanowire by solving the problem of unintentional quantum dot formation, which exacerbates in a suspended nanowire. The origin of this worsening is the higher potential barrier presumably owing to the enhancement of random-dopantinduced potential fluctuation and/or higher degree of surface roughness and surface trapped charges on suspended nanowires. The higher barrier was successfully decreased by adopting a higher doping concentration as well as wider constriction patterns. Consequently, we can control the quantum dot formation in the suspended nanowire and successfully defined a single-quantum dot by patterning the double constrictions on the heavily doped suspended nanowire.

    本文言語English
    ページ(範囲)440011-440015
    ページ数5
    ジャーナルJapanese journal of applied physics
    49
    4 PART 1
    DOI
    出版ステータスPublished - 2010 4

    ASJC Scopus subject areas

    • 工学(全般)
    • 物理学および天文学(全般)

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