Switching characteristics in the ferroelectric organic molecular memories

H. Uemura, S. Horie, K. Noda, S. Kuwajima, K. Ishida, T. Horiuchi, K. Matsushige

研究成果: Conference contribution

1 引用 (Scopus)

抜粋

Organic molecular memories are expected to become one of the essential key devices in the next-generation flexible digital instruments, and in this paper a novel non-volatile organic memory will be introduced. It is shown that the polarization switching characteristics in the ferroelectric films of vinylidene fluoride (VDF) oligomer and P(VDF/TrFE) copolymer change with their structural factors such as crystallinity and chain length of the materials, and the switching time becomes shorter and shorter with increasing applied electric field and reaches in the order of nano-second. Moreover, the possibilities of the application of such thin organic ferroelectric films to an infrared image sensor as well as the creation of the ultra high-density molecular memory by utilizing recent scanning probe microscopy (SPM) technique will be discussed.

元の言語English
ホスト出版物のタイトル2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
ページ148-149
ページ数2
DOI
出版物ステータスPublished - 2006 12 1
外部発表Yes
イベント2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of
継続期間: 2006 10 222006 10 25

出版物シリーズ

名前2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
1

Other

Other2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Korea, Republic of
Gyeongju
期間06/10/2206/10/25

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)

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  • これを引用

    Uemura, H., Horie, S., Noda, K., Kuwajima, S., Ishida, K., Horiuchi, T., & Matsushige, K. (2006). Switching characteristics in the ferroelectric organic molecular memories. : 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC (pp. 148-149). [4388722] (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC; 巻数 1). https://doi.org/10.1109/NMDC.2006.4388722