T-shaped GaAs quantum-wire lasers and the exciton Mott transition

M. Yoshita, S. M. Liu, Makoto Okano, Y. Hayamizu, H. Akiyama, L. N. Pfeiffer, K. W. West

研究成果: Article

13 引用 (Scopus)

抄録

T-shaped GaAs quantum-wire (T-wire) lasers fabricated by the cleaved-edge overgrowth method with molecular beam epitaxy on the interface improved by a growth-interrupt high-temperature anneal are measured to study the laser device physics and fundamental many-body physics in clean one-dimensional (1D) systems. A current-injection T-wire laser that has 20periods of T-wires in the active region and a 0.5mm long cavity with high-reflection coatings shows a low threshold current of 0.27mA at 30K. The origin of the laser gain above the lasing threshold is studied with the high-quality T-wire lasers by means of optical pumping. The lasing energy is about 5meV below the photoluminescence (PL) peak of free excitons, and is on the electron-hole (e-h) plasma PL band at a high e-h carrier density. The observed energy shift excludes the laser gain due to free excitons, and it suggests a contribution from the e-h plasma instead. A systematic micro-PL study reveals that the PL evolves with the e-h density from a sharp exciton peak, via a biexciton peak, to an e-h-plasma PL band. The data demonstrate an important role of biexcitons in the exciton Mott transition. Comparison with microscopic theories points out some problems in the picture of the exciton Mott transition.

元の言語English
記事番号295217
ジャーナルJournal of Physics Condensed Matter
19
発行部数29
DOI
出版物ステータスPublished - 2007 7 25
外部発表Yes

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Semiconductor quantum wires
Electron transitions
quantum wires
Excitons
excitons
Photoluminescence
Lasers
photoluminescence
Electrons
lasers
Plasmas
lasing
Physics
Optical pumping
physics
optical pumping
threshold currents
Molecular beam epitaxy
Carrier concentration
gallium arsenide

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

これを引用

Yoshita, M., Liu, S. M., Okano, M., Hayamizu, Y., Akiyama, H., Pfeiffer, L. N., & West, K. W. (2007). T-shaped GaAs quantum-wire lasers and the exciton Mott transition. Journal of Physics Condensed Matter, 19(29), [295217]. https://doi.org/10.1088/0953-8984/19/29/295217

T-shaped GaAs quantum-wire lasers and the exciton Mott transition. / Yoshita, M.; Liu, S. M.; Okano, Makoto; Hayamizu, Y.; Akiyama, H.; Pfeiffer, L. N.; West, K. W.

:: Journal of Physics Condensed Matter, 巻 19, 番号 29, 295217, 25.07.2007.

研究成果: Article

Yoshita, M, Liu, SM, Okano, M, Hayamizu, Y, Akiyama, H, Pfeiffer, LN & West, KW 2007, 'T-shaped GaAs quantum-wire lasers and the exciton Mott transition', Journal of Physics Condensed Matter, 巻. 19, 番号 29, 295217. https://doi.org/10.1088/0953-8984/19/29/295217
Yoshita, M. ; Liu, S. M. ; Okano, Makoto ; Hayamizu, Y. ; Akiyama, H. ; Pfeiffer, L. N. ; West, K. W. / T-shaped GaAs quantum-wire lasers and the exciton Mott transition. :: Journal of Physics Condensed Matter. 2007 ; 巻 19, 番号 29.
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