Temperature dependence of photoacoustic spectra in CuInSe2 thin films grown by molecular beam epitaxy

K. Yoshino, T. Shimizu, A. Fukuyama, K. Maeda, P. J. Fons, A. Yamada, S. Niki, T. Ikari

研究成果: Article査読

12 被引用数 (Scopus)

抄録

CuInSe2 (CIS) thin films, the thickness of about 1.0 μm and composition of Cu/In ratio (γ = 1.79), were grown on (0 0 1)-oriented GaAs substrate by molecular beam epitaxy (MBE) at substrate temperature of Ts = 450°C. The samples have been characterized by means of piezoelectric photoacoustic (PPA) measurements between liquid helium (4.2 K) and room temperature (300 K). Two distinct PPA signals due to band gap of CIS and GaAs are observed in the whole temperature range from 4.2 to 300 K and the PPA signals of CIS decrease curvilinearly at the temperature range. Since the PPA signals of CIS thin films can be obtained up to room temperature, the PPA measurements are quite effective to obtain the optical characterizations, especially for the nonradiative recombination processes.

本文言語English
ページ(範囲)127-132
ページ数6
ジャーナルSolar Energy Materials and Solar Cells
50
1-4
DOI
出版ステータスPublished - 1998 1月
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 再生可能エネルギー、持続可能性、環境
  • 表面、皮膜および薄膜

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