Temperature variation of nonradiative carrier recombination processes in high-quality CuGaSe2 thin films grown by molecular beam epitaxy

Kenji Yoshino, Daisuke Maruoka, Tetsuo Ikari, Paul J. Fons, Shigeru Niki, Akimasa Yamada

研究成果: Article査読

11 被引用数 (Scopus)

抄録

The piezoelectric photoacoustic (PPA) measurements tor Cu-rich CuGaSe2(CGS)/GaAs(001) epitaxial layer were carried out between liquid helium and room temperatures. The band gap energies of CGS (A, B, and C bands) were measured to be 1.73, 1.83, and 2.04 eV at liquid nitrogen temperature, respectively. The A band was clearly obtained from 5 to 300 K, and the temperature dependence of the peak energy was fitted with the modified Manoogian-Woolley equation. PPA signals for CGS/GaAs (001) epitaxial layers were obtained between liquid helium and room temperature.

本文言語English
ページ(範囲)259-261
ページ数3
ジャーナルApplied Physics Letters
77
2
DOI
出版ステータスPublished - 2000 7 10
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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