Tetrahedral-shaped recess (lll)a facet channel algaas/ingaas heteroj unction field-effect transistor with an ingaas floating quantum dot gate

Masashi Shima, Yoshiki Sakuma, Toshiro Futatsugi, Yuji Awano

研究成果: Article査読

6 被引用数 (Scopus)

抄録

A transistor and memory operation of a new AlGaAs/InGaAs heterojunction field-effect transistor (HFET) in a tetrahedral-shaped recess (TSR) on the (lll)B GaAs substrate was investigated at a temperature up to 120 K. The TSR-FET memory has a channel on the (lll)A side surfaces of the recess and a single floating quantum dot (QD) gate at the bottom. Owing to the particular shape of the TSR structure, the charge in the floating QD gate can effectively modulate the channel current. We found a clear hysteresis in the current-voltage (I-V) characteristics with an abrupt increase and decrease in the current at the subthreshold gate bias region. Random telegraph signals with a constant amplitude of about 70 nA were also observed in the memory retention characteristics. These phenomena were considered to be attributed to the current modulation by hole charging/discharging in the QD.

本文言語English
ページ(範囲)2054-2060
ページ数7
ジャーナルIEEE Transactions on Electron Devices
47
11
DOI
出版ステータスPublished - 2000 11
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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