抄録
A transistor and memory operation of a new AlGaAs/InGaAs heterojunction field-effect transistor (HFET) in a tetrahedral-shaped recess (TSR) on the (lll)B GaAs substrate was investigated at a temperature up to 120 K. The TSR-FET memory has a channel on the (lll)A side surfaces of the recess and a single floating quantum dot (QD) gate at the bottom. Owing to the particular shape of the TSR structure, the charge in the floating QD gate can effectively modulate the channel current. We found a clear hysteresis in the current-voltage (I-V) characteristics with an abrupt increase and decrease in the current at the subthreshold gate bias region. Random telegraph signals with a constant amplitude of about 70 nA were also observed in the memory retention characteristics. These phenomena were considered to be attributed to the current modulation by hole charging/discharging in the QD.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 2054-2060 |
| ページ数 | 7 |
| ジャーナル | IEEE Transactions on Electron Devices |
| 巻 | 47 |
| 発行部数 | 11 |
| DOI | |
| 出版物ステータス | Published - 2000 11 |
| 外部発表 | Yes |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Physics and Astronomy (miscellaneous)
これを引用
Tetrahedral-shaped recess (lll)a facet channel algaas/ingaas heteroj unction field-effect transistor with an ingaas floating quantum dot gate. / Shima, Masashi; Sakuma, Yoshiki; Futatsugi, Toshiro; Awano, Yuji.
：: IEEE Transactions on Electron Devices, 巻 47, 番号 11, 11.2000, p. 2054-2060.研究成果: Article
}
TY - JOUR
T1 - Tetrahedral-shaped recess (lll)a facet channel algaas/ingaas heteroj unction field-effect transistor with an ingaas floating quantum dot gate
AU - Shima, Masashi
AU - Sakuma, Yoshiki
AU - Futatsugi, Toshiro
AU - Awano, Yuji
PY - 2000/11
Y1 - 2000/11
N2 - A transistor and memory operation of a new AlGaAs/InGaAs heterojunction field-effect transistor (HFET) in a tetrahedral-shaped recess (TSR) on the (lll)B GaAs substrate was investigated at a temperature up to 120 K. The TSR-FET memory has a channel on the (lll)A side surfaces of the recess and a single floating quantum dot (QD) gate at the bottom. Owing to the particular shape of the TSR structure, the charge in the floating QD gate can effectively modulate the channel current. We found a clear hysteresis in the current-voltage (I-V) characteristics with an abrupt increase and decrease in the current at the subthreshold gate bias region. Random telegraph signals with a constant amplitude of about 70 nA were also observed in the memory retention characteristics. These phenomena were considered to be attributed to the current modulation by hole charging/discharging in the QD.
AB - A transistor and memory operation of a new AlGaAs/InGaAs heterojunction field-effect transistor (HFET) in a tetrahedral-shaped recess (TSR) on the (lll)B GaAs substrate was investigated at a temperature up to 120 K. The TSR-FET memory has a channel on the (lll)A side surfaces of the recess and a single floating quantum dot (QD) gate at the bottom. Owing to the particular shape of the TSR structure, the charge in the floating QD gate can effectively modulate the channel current. We found a clear hysteresis in the current-voltage (I-V) characteristics with an abrupt increase and decrease in the current at the subthreshold gate bias region. Random telegraph signals with a constant amplitude of about 70 nA were also observed in the memory retention characteristics. These phenomena were considered to be attributed to the current modulation by hole charging/discharging in the QD.
KW - Fets
KW - Gaas(lll)b
KW - Heterojunctions
KW - Memories
KW - Quantum dots
KW - Rtss (random telegraph signals)
KW - Tsr (tetrahedral-shaped recess)
UR - http://www.scopus.com/inward/record.url?scp=0034318448&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0034318448&partnerID=8YFLogxK
U2 - 10.1109/16.877166
DO - 10.1109/16.877166
M3 - Article
AN - SCOPUS:0034318448
VL - 47
SP - 2054
EP - 2060
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 11
ER -