TY - JOUR
T1 - The effect of the nitrogen plasma irradiation on ZnO single crystals
AU - Maki, H.
AU - Ichinose, N.
AU - Sakaguchi, I.
AU - Ohashi, N.
AU - Haneda, H.
AU - Tanaka, J.
PY - 2001/1/1
Y1 - 2001/1/1
N2 - The ZnO (0001) and (0001̄) surfaces irradiated with nitrogen using an electron cyclotron resonance (ECR) gun were studied with X-ray photoelectron spectroscopy (XPS). After annealed at 800°C, N ions remained on the surfaces in four states: i.e. NO, N2, the N species that has excess electrons like NH3 or N2, and the N ions that replaced O ions in ZnO lattice. The surface oxygen could be substituted with N ions that could affect N-doping and the heterogeneous growth of nitride thin films on ZnO.
AB - The ZnO (0001) and (0001̄) surfaces irradiated with nitrogen using an electron cyclotron resonance (ECR) gun were studied with X-ray photoelectron spectroscopy (XPS). After annealed at 800°C, N ions remained on the surfaces in four states: i.e. NO, N2, the N species that has excess electrons like NH3 or N2, and the N ions that replaced O ions in ZnO lattice. The surface oxygen could be substituted with N ions that could affect N-doping and the heterogeneous growth of nitride thin films on ZnO.
KW - Doping
KW - Electron cyclotron resonance
KW - Nitrogen
KW - X-ray photoelectron spectroscopy
KW - Zinc oxide
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M3 - Conference article
AN - SCOPUS:0034772871
SN - 1013-9826
VL - 216
SP - 61
EP - 64
JO - Key Engineering Materials
JF - Key Engineering Materials
T2 - 20th Electronics Division Meeting of the Ceramic Society of Japan
Y2 - 26 October 2000 through 27 October 2000
ER -