The first principle computer simulation and real device characteristics of superlattice phase-change memory

J. Tominaga, R. Simpson, P. Fons, A. Kolobov

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

This paper presents of atomically controlled Ge-Sb-Te films that enable a suppression of switching energy, and an increase in speed faster than that using the composite films in Set and Reset. The first principle computer simulations using NVT ensemble dynamics and real device fabrication based on the model were carried out. We found that the obtained experimental data are in good agreement with the simulation models, and succeeded in suppressing the Reset energy by less than 10%.

本文言語English
ホスト出版物のタイトル2010 IEEE International Electron Devices Meeting, IEDM 2010
ページ22.3.1-22.3.4
DOI
出版ステータスPublished - 2010 12 1
外部発表はい
イベント2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States
継続期間: 2010 12 62010 12 8

出版物シリーズ

名前Technical Digest - International Electron Devices Meeting, IEDM
ISSN(印刷版)0163-1918

Other

Other2010 IEEE International Electron Devices Meeting, IEDM 2010
CountryUnited States
CitySan Francisco, CA
Period10/12/610/12/8

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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