The order-disorder transition in GeTe: Views from different length-scales

T. Matsunaga, P. Fons, A. V. Kolobov, J. Tominaga, N. Yamada

研究成果: Article査読

58 被引用数 (Scopus)

抄録

GeTe is a narrow band gap semiconductor that undergoes a ferroelectric-to-paraelectric phase transition at ∼705 K. While earlier studies of average structure using Bragg diffraction concluded that the transition was displacive, structural probing of short and intermediate order shows evidence for an order-disorder transition. Here, we report and contrast the structure on different length scales with temperature using a radial distribution function analysis obtained from x-ray based total scattering and show that the order-disorder model is consistent with experiment.

本文言語English
論文番号231907
ジャーナルApplied Physics Letters
99
23
DOI
出版ステータスPublished - 2011 12月 5
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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