TY - JOUR
T1 - The Radical Transport in the Narrow-Gap-Reactive-Ion Etcher in SF6 by the Relaxation Continuum Model
AU - Nakano, Nobuhiko
AU - Petrović, Zoran Lj
AU - Makabe, Toshiaki
PY - 1994/4
Y1 - 1994/4
N2 - We have established a selfconsistent modeling of a narrow-gap reactive ion etcher (N-gap-RIE) with parallel-plate geometry in SF6. Using the discharge structure of the relaxation continuum model, we have numerically predicted the radical transport to the surface of N-gap-RIE in SF6 under two different surface reactions. The spatiotemporal profiles of radicals and neutrals are demonstrated for a long time scale (0–1 s) at between 0.05 Torr and 1.0 Torr at 13.56 MHz. The estimated etch rate of Si wafer with F radicals agrees reasonably well with the previous experimental value obtained under a low-power condition. It is stressed from the present result that the ion-molecule reactions for the generation of F radicals as well as the electron impact dissociation of SF6 are of great importance.
AB - We have established a selfconsistent modeling of a narrow-gap reactive ion etcher (N-gap-RIE) with parallel-plate geometry in SF6. Using the discharge structure of the relaxation continuum model, we have numerically predicted the radical transport to the surface of N-gap-RIE in SF6 under two different surface reactions. The spatiotemporal profiles of radicals and neutrals are demonstrated for a long time scale (0–1 s) at between 0.05 Torr and 1.0 Torr at 13.56 MHz. The estimated etch rate of Si wafer with F radicals agrees reasonably well with the previous experimental value obtained under a low-power condition. It is stressed from the present result that the ion-molecule reactions for the generation of F radicals as well as the electron impact dissociation of SF6 are of great importance.
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U2 - 10.1143/JJAP.33.2223
DO - 10.1143/JJAP.33.2223
M3 - Article
AN - SCOPUS:0028405020
VL - 33
SP - 2223
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4S
ER -