TY - JOUR
T1 - The strain energy densities of hexagonal and tetragonal epitaxial media
AU - Bottomley, David J.
AU - Fons, Paul
PY - 1995/12
Y1 - 1995/12
N2 - Motivated by the burgeoning interest in the epitaxial growth of hexagonal and tetragonal semiconductors, we report expressions for the strain energy density for the high symmetry directions in these crystal systems. In addition, we have calculated the behaviour of the strain energy density as a function of epilayer surface normal orientation for the following systems: GaN on 6H-SiC, GaN on AIN, AIN on 6H-SiC and CuInSe2 on GaAs. For the first three cases, we suggest that substrate orientations not yet investigated may improve film quality as they will serve to reduce the strain energy density by approximately 30%, 17% and 65%, respectively, relative to the commonly employed (001) substrate orientation.
AB - Motivated by the burgeoning interest in the epitaxial growth of hexagonal and tetragonal semiconductors, we report expressions for the strain energy density for the high symmetry directions in these crystal systems. In addition, we have calculated the behaviour of the strain energy density as a function of epilayer surface normal orientation for the following systems: GaN on 6H-SiC, GaN on AIN, AIN on 6H-SiC and CuInSe2 on GaAs. For the first three cases, we suggest that substrate orientations not yet investigated may improve film quality as they will serve to reduce the strain energy density by approximately 30%, 17% and 65%, respectively, relative to the commonly employed (001) substrate orientation.
KW - AIN
KW - Chalcopyrite
KW - CulnSe2
KW - Epitaxy
KW - GaN
KW - Hexagonal
KW - Strain energy density
KW - Substrate orientation
KW - Tetragonal
UR - http://www.scopus.com/inward/record.url?scp=0029530987&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0029530987&partnerID=8YFLogxK
U2 - 10.1143/JJAP.34.L1616
DO - 10.1143/JJAP.34.L1616
M3 - Article
AN - SCOPUS:0029530987
VL - 34
SP - L1616-L1619
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 12
ER -