Theory of the anisotropy of the electron Hall mobility in n-type 4H- and 6H-SiC

Hisaomi Iwata, Kohei M. Itoh, Gerhard Pensl

研究成果: Article査読

42 被引用数 (Scopus)

抄録

A theoretical model for the calculation of the anisotropy in the electron Hall mobility is reported for n-type bulk single crystals of 4H- and 6H-SiC for the three distinct Hall measurement configurations: (a) [B∥c, j⊥c], (b) [B⊥c, j⊥c], and (c) [B⊥c, j∥c], where B, j, and c are the directions of the magnetic field, current flow, and c axis of the hexagonal unit cell, respectively. Comparison with experimental results shows that the anisotropy of the electron transport in both 4H- and 6H-SiC can be explained solely by the anisotropy in the effective electron mass tensors.

本文言語English
ページ(範囲)1956-1961
ページ数6
ジャーナルJournal of Applied Physics
88
4
DOI
出版ステータスPublished - 2000 8 15

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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