We report on calculations of the anisotropy of the electron Hall mobility and its temperature dependence in n-type 6H-SiC. The model is based on the conduction band structure determined recently by a first-principle calculation. It provides explicit and easy to use analytical expressions for both drift and Hall mobilities. The calculation of the Hall mobility based on our model agrees very well with experimentally determined anisotropic Hall mobility in 6H-SiC.
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