Theory of the electron mobility in n-type 6H-SiC

T. Kinoshita, K. M. Itoh, M. Schadt, G. Pensl

研究成果: Article査読

18 被引用数 (Scopus)

抄録

We report on calculations of the anisotropy of the electron Hall mobility and its temperature dependence in n-type 6H-SiC. The model is based on the conduction band structure determined recently by a first-principle calculation. It provides explicit and easy to use analytical expressions for both drift and Hall mobilities. The calculation of the Hall mobility based on our model agrees very well with experimentally determined anisotropic Hall mobility in 6H-SiC.

本文言語English
ページ(範囲)8193-8198
ページ数6
ジャーナルJournal of Applied Physics
85
12
DOI
出版ステータスPublished - 1999 6月 15

ASJC Scopus subject areas

  • 物理学および天文学(全般)

フィンガープリント

「Theory of the electron mobility in n-type 6H-SiC」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル