Thermal and source bumps utilizing carbon nanotubes for flip-chip high power amplifiers

T. Iwai, H. Shioya, D. Kondo, S. Hirose, A. Kawabata, S. Sato, M. Nihei, T. Kikkawa, K. Joshin, Yuji Awano, N. Yokoyama

研究成果: Conference contribution

29 引用 (Scopus)

抄録

Carbon nanotubes (CNTs) have been successfully developed as thermal and source bumps for flip-chip high power amplifiers (HPAs). The newly developed 15 μm long CNT bumps exhibit thermal conductivity of 1400 W/m·K. A flip-chip AlGaN/GaN HEMT HPA with a gate width of 2.4 mm utilizing CNT bumps, operating voltage of 40 V, exhibits an output power of 39 dBm at a frequency of 2.1GHz without any degradation due to heat-up. To our knowledge, this is the first report about a practical application of CNTs using their high thermal conductivity.

元の言語English
ホスト出版物のタイトルTechnical Digest - International Electron Devices Meeting, IEDM
ページ257-260
ページ数4
2005
出版物ステータスPublished - 2005
外部発表Yes
イベントIEEE International Electron Devices Meeting, 2005 IEDM - Washington, DC, MD, United States
継続期間: 2005 12 52005 12 7

Other

OtherIEEE International Electron Devices Meeting, 2005 IEDM
United States
Washington, DC, MD
期間05/12/505/12/7

Fingerprint

Power amplifiers
Carbon nanotubes
Thermal conductivity
High electron mobility transistors
Degradation
Hot Temperature
Electric potential

ASJC Scopus subject areas

  • Engineering(all)

これを引用

Iwai, T., Shioya, H., Kondo, D., Hirose, S., Kawabata, A., Sato, S., ... Yokoyama, N. (2005). Thermal and source bumps utilizing carbon nanotubes for flip-chip high power amplifiers. : Technical Digest - International Electron Devices Meeting, IEDM (巻 2005, pp. 257-260). [1609322]

Thermal and source bumps utilizing carbon nanotubes for flip-chip high power amplifiers. / Iwai, T.; Shioya, H.; Kondo, D.; Hirose, S.; Kawabata, A.; Sato, S.; Nihei, M.; Kikkawa, T.; Joshin, K.; Awano, Yuji; Yokoyama, N.

Technical Digest - International Electron Devices Meeting, IEDM. 巻 2005 2005. p. 257-260 1609322.

研究成果: Conference contribution

Iwai, T, Shioya, H, Kondo, D, Hirose, S, Kawabata, A, Sato, S, Nihei, M, Kikkawa, T, Joshin, K, Awano, Y & Yokoyama, N 2005, Thermal and source bumps utilizing carbon nanotubes for flip-chip high power amplifiers. : Technical Digest - International Electron Devices Meeting, IEDM. 巻. 2005, 1609322, pp. 257-260, IEEE International Electron Devices Meeting, 2005 IEDM, Washington, DC, MD, United States, 05/12/5.
Iwai T, Shioya H, Kondo D, Hirose S, Kawabata A, Sato S その他. Thermal and source bumps utilizing carbon nanotubes for flip-chip high power amplifiers. : Technical Digest - International Electron Devices Meeting, IEDM. 巻 2005. 2005. p. 257-260. 1609322
Iwai, T. ; Shioya, H. ; Kondo, D. ; Hirose, S. ; Kawabata, A. ; Sato, S. ; Nihei, M. ; Kikkawa, T. ; Joshin, K. ; Awano, Yuji ; Yokoyama, N. / Thermal and source bumps utilizing carbon nanotubes for flip-chip high power amplifiers. Technical Digest - International Electron Devices Meeting, IEDM. 巻 2005 2005. pp. 257-260
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AU - Shioya, H.

AU - Kondo, D.

AU - Hirose, S.

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AU - Sato, S.

AU - Nihei, M.

AU - Kikkawa, T.

AU - Joshin, K.

AU - Awano, Yuji

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