@inproceedings{cb75629c1d3441d5a315b8e15cbe9e2f,
title = "Thermal-aware device design of nanoscale bulk/SOI FinFETs: Suppression of operation temperature and its variability",
abstract = "The self-heating effects in Bulk/SOI FinFETs have been systematically investigated and compared. It is demonstrated that lattice temperature is significantly lower in Bulk FinFETs owing to the larger heat dissipation to the Si substrate. Heat dissipation paths in Bulk/SOI FinFETs have been studied and the device-parameter dependence of thermal characteristics has been analyzed. It is demonstrated that the Bulk FinFETs show greater temperature fluctuations resulting from device parameter variations. The fluctuation can be greatly suppressed by miniaturizing the extension length. It is shown that the impact of thermal resistance at the MOS interface is more significant in SOI FinFETs than in Bulk FinFETs.",
author = "Tsunaki Takahashi and Nobuyasu Beppu and Kunro Chen and Shunri Oda and Ken Uchida",
year = "2011",
month = dec,
day = "1",
doi = "10.1109/IEDM.2011.6131672",
language = "English",
isbn = "9781457705052",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
pages = "34.6.1--34.6.4",
booktitle = "2011 International Electron Devices Meeting, IEDM 2011",
note = "2011 IEEE International Electron Devices Meeting, IEDM 2011 ; Conference date: 05-12-2011 Through 07-12-2011",
}