Thermal-aware device design of nanoscale bulk/SOI FinFETs: Suppression of operation temperature and its variability

Tsunaki Takahashi, Nobuyasu Beppu, Kunro Chen, Shunri Oda, Ken Uchida

    研究成果: Conference contribution

    31 被引用数 (Scopus)

    抄録

    The self-heating effects in Bulk/SOI FinFETs have been systematically investigated and compared. It is demonstrated that lattice temperature is significantly lower in Bulk FinFETs owing to the larger heat dissipation to the Si substrate. Heat dissipation paths in Bulk/SOI FinFETs have been studied and the device-parameter dependence of thermal characteristics has been analyzed. It is demonstrated that the Bulk FinFETs show greater temperature fluctuations resulting from device parameter variations. The fluctuation can be greatly suppressed by miniaturizing the extension length. It is shown that the impact of thermal resistance at the MOS interface is more significant in SOI FinFETs than in Bulk FinFETs.

    本文言語English
    ホスト出版物のタイトル2011 International Electron Devices Meeting, IEDM 2011
    ページ34.6.1-34.6.4
    DOI
    出版ステータスPublished - 2011 12月 1
    イベント2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States
    継続期間: 2011 12月 52011 12月 7

    出版物シリーズ

    名前Technical Digest - International Electron Devices Meeting, IEDM
    ISSN(印刷版)0163-1918

    Other

    Other2011 IEEE International Electron Devices Meeting, IEDM 2011
    国/地域United States
    CityWashington, DC
    Period11/12/511/12/7

    ASJC Scopus subject areas

    • 電子材料、光学材料、および磁性材料
    • 凝縮系物理学
    • 電子工学および電気工学
    • 材料化学

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