Three Dimensional Polysilicon Type Accelerometer Using Poly-Si/SiO2/Si/SiO2/Si Structure

Kijin Kwon, Sekwang Park, Yoshinori Matsumoto, Makoto Ishida, Sekwang Park

研究成果: Article査読

抄録

Three dimensional accelerometer was fabricated by Poly-Si/SiO2/Si/SiO2/Si structure using SDEKsilicon direct bonding) technology and LPCVD. The optimization of fabricated accelerometer was performed using the results of FEM(finite element method) simulation. The variations of stress according to each direction were utilized to detect the three dimensional acceleration and eliminate cross-axis sensitivities. The values of TCR(temperature coefficient of resistance) for polysilicon with two different dose amount were 611[ppm/°C] and 644[ppm/°C] in the 25°C-250°C range respectively. TCCKtemperature coefficient of offset) shift for X, Y and Z-axis Wheatstone bridge outputs was about 0~0.07[%F.S.], 0.028~-0.016[%F.SJ and 0.007~-0, 004[%F.S.] in the 25°C~160°C range respectively. The sensitivities of fabricated sensor for X, Y and Z-axis acceleration were about 0.06[mV/V · g], 0.06mV/V · g] and 0.13[mV/V g] at a room temperature. The cross-axis sensitivity for X, Y and Z-axis acceleration was about 0.0093[mV/V g], which stands for the elimination of cross-axis sensitivities as designed. The developed sensor can be used in many applications such as automotive and robot industry, navigation system and earthquake detection, etc. Key words: three dimensional accelerometer, SDB, FEM, cross-axis sensitivities, polysilicon.

本文言語English
ページ(範囲)384-390
ページ数7
ジャーナルieej transactions on sensors and micromachines
117
7
DOI
出版ステータスPublished - 1997
外部発表はい

ASJC Scopus subject areas

  • Mechanical Engineering
  • Electrical and Electronic Engineering

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