In this paper, a novel piezoresistive silicon accelerometer using SOI structure is described. The accelerometer is formed to have endurance for high temperature by perfect isolation of the piezoresistors. The accelerometer has surrounding mass structure to detect the three dimensional (3-D) acceleration with a new method using analog operating circuits. The sensor sizes were optimized with FEM simulation. The accelerometer was fabricated by bulk micro-machining technology. Both the temperature characteristics and the output characteristics were measured, and the characteristics of the fabricated chip were compared with the simulated results.
|出版ステータス||Published - 1995 12月 1|
|イベント||Proceedings of the 1995 8th International Conference on Solid-State Sensors and Actuators and Eurosensors IX. Part 1 (of 2) - Stockholm, Sweden|
継続期間: 1995 6月 25 → 1995 6月 29
|Other||Proceedings of the 1995 8th International Conference on Solid-State Sensors and Actuators and Eurosensors IX. Part 1 (of 2)|
|Period||95/6/25 → 95/6/29|
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