Three dimensional vector accelerometer using SOI structure for high temperature

Hidekuni Takao, Yoshinori Matsumoto, Hee Don Seo, Hidekazu Tanaka

研究成果: Paper査読

12 被引用数 (Scopus)

抄録

In this paper, a novel piezoresistive silicon accelerometer using SOI structure is described. The accelerometer is formed to have endurance for high temperature by perfect isolation of the piezoresistors. The accelerometer has surrounding mass structure to detect the three dimensional (3-D) acceleration with a new method using analog operating circuits. The sensor sizes were optimized with FEM simulation. The accelerometer was fabricated by bulk micro-machining technology. Both the temperature characteristics and the output characteristics were measured, and the characteristics of the fabricated chip were compared with the simulated results.

本文言語English
ページ683-686
ページ数4
出版ステータスPublished - 1995 12月 1
外部発表はい
イベントProceedings of the 1995 8th International Conference on Solid-State Sensors and Actuators and Eurosensors IX. Part 1 (of 2) - Stockholm, Sweden
継続期間: 1995 6月 251995 6月 29

Other

OtherProceedings of the 1995 8th International Conference on Solid-State Sensors and Actuators and Eurosensors IX. Part 1 (of 2)
CityStockholm, Sweden
Period95/6/2595/6/29

ASJC Scopus subject areas

  • 工学(全般)

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