Threshold voltage increase by quantum mechanical narrow channel effect in ultra-narrow MOSFETs

H. Majima, H. Ishikuro, T. Hiramoto

研究成果: Conference article

23 引用 (Scopus)

抜粋

This paper describes a new narrow channel effect by quantum mechanical effects in ultra-narrow MOSFETs. Threshold voltage increase is observed at room temperature in ultra-narrow MOSFETs whose channel width is less than 10 nm. This result is in excellent agreement with simulation that takes into account horizontal and vertical carrier confinement in a silicon narrow wire, indicating that the increase in threshold voltage is caused by the quantum mechanical narrow channel effect.

元の言語English
ページ(範囲)379-382
ページ数4
ジャーナルTechnical Digest - International Electron Devices Meeting
出版物ステータスPublished - 1999 12 1
外部発表Yes
イベント1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA
継続期間: 1999 12 51999 12 8

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

フィンガープリント Threshold voltage increase by quantum mechanical narrow channel effect in ultra-narrow MOSFETs' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用