Time-resolved measurement of charging on hole bottoms of SiO2 wafer exposed to plasma etching in a pulsed two-frequency capacitively coupled plasma

Takeshi Ohmori, Takeshi Kamata Goto, Takeshi Kitajima, Toshiaki Makabe

研究成果: Article査読

9 被引用数 (Scopus)

抄録

We experimentally demonstrate a time chart of the shading either of electrons or positive ions on a topologically patterned wafer exposed to plasma etching by synchronized measurements of bottom-charging potential in a SiO 2 hole, current components incident on the wafer, and optical emission CT in the interface in a pulsed two frequency capacitively coupled plasma. The present paper gives a history of charging affected dynamically by an instantaneous electrical response on the bottom.

本文言語English
ページ(範囲)L1105-L1108
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
44
33-36
DOI
出版ステータスPublished - 2005 8 26

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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