Toward charging free plasma processes: Phase space modeling between pulsed plasma and microtrench

T. Makabe, J. Matsui, M. Shibata, N. Nakano

研究成果: Paper査読

2 被引用数 (Scopus)

抄録

Local excess charging is one of the causes of damage to ULSI circuit fabrication, i.e., anomalous etching and electrical breakdown of the gate oxide. The interface between a pulsed plasma and a microstructure on a wafer is investigated by phase space modeling, with a focus on the charging free process.

本文言語English
ページ156-159
ページ数4
出版ステータスPublished - 1998 12月 1
イベントProceedings of the 1998 3rd International Symposium on Plasma Process-Induced Damage, P2ID - Honolulu, HI, USA
継続期間: 1998 6月 41998 6月 5

Other

OtherProceedings of the 1998 3rd International Symposium on Plasma Process-Induced Damage, P2ID
CityHonolulu, HI, USA
Period98/6/498/6/5

ASJC Scopus subject areas

  • 工学(全般)

フィンガープリント

「Toward charging free plasma processes: Phase space modeling between pulsed plasma and microtrench」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル