抄録
Local excess charging is one of the causes of damage to ULSI circuit fabrication, i.e., anomalous etching and electrical breakdown of the gate oxide. The interface between a pulsed plasma and a microstructure on a wafer is investigated by phase space modeling, with a focus on the charging free process.
| 本文言語 | English |
|---|---|
| ページ | 156-159 |
| ページ数 | 4 |
| 出版ステータス | Published - 1998 12月 1 |
| イベント | Proceedings of the 1998 3rd International Symposium on Plasma Process-Induced Damage, P2ID - Honolulu, HI, USA 継続期間: 1998 6月 4 → 1998 6月 5 |
Other
| Other | Proceedings of the 1998 3rd International Symposium on Plasma Process-Induced Damage, P2ID |
|---|---|
| City | Honolulu, HI, USA |
| Period | 98/6/4 → 98/6/5 |
ASJC Scopus subject areas
- 工学（全般）