Toward the ultimate limit of phase change in Ge2Sb 2Te5

R. E. Simpson, M. Krbal, P. Fons, A. V. Kolobov, J. Tominaga, T. Uruga, H. Tanida

研究成果: Article査読

207 被引用数 (Scopus)

抄録

The limit to which the phase change memory material Ge2Sb 2Te5 can be scaled toward the smallest possible memory cell is investigated using structural and optical methodologies. The encapsulation material surrounding the Ge2Sb2Te 5 has an increasingly dominant effect on the material's ability to change phase, and a profound increase in the crystallization temperature is observed when the Ge2Sb2Te5 layer is less than 6 nm thick. We have found that the Increased crystallization temperature originates from compressive stress exerted from the encapsulation material. By minimizing the stress, we have maintained the bulk crystallization temperature in Ge2Sb2Te5 films just 2 nm thick,

本文言語English
ページ(範囲)414-419
ページ数6
ジャーナルNano Letters
10
2
DOI
出版ステータスPublished - 2010 2月 10
外部発表はい

ASJC Scopus subject areas

  • バイオエンジニアリング
  • 化学 (全般)
  • 材料科学(全般)
  • 凝縮系物理学
  • 機械工学

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