Transformation of GaAs (0 0 1)-(1 1 1)B facet structure by surface diffusion during molecular beam epitaxy on patterned substrates

S. Koshiba, Y. Nakamura, T. Noda, S. Watanabe, H. Akiyama, H. Sakaki

研究成果: Conference article査読

5 被引用数 (Scopus)

抄録

The mechanisms of molecular beam epitaxy growth on the mesa patterned substrates which results in the formation of sharp ridge structure were investigated. A simple model, based on the scanning electron microscope measurements, nicely explains the time dependent growth rates as well as the change of the facet shape during the formation of ridge structure originating from the strong Ga atoms migration. The estimated number of atoms crossing the boundary changes according to the alternating facet shape and this indicates the instability in the facet growth. As a result, the mechanism of mesa growth was clarified, which becomes self-regulatory while the facet shape and/or the boundary condition vary as the growth progresses.

本文言語English
ページ(範囲)62-66
ページ数5
ジャーナルJournal of Crystal Growth
227-228
DOI
出版ステータスPublished - 2001 7 1
外部発表はい
イベント11th International Conference on Molecular Beam Epitaxy - Bijing, China
継続期間: 2000 9 112000 9 15

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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