Transport properties of photoexcited carriers in a fibonacci superlattice

A. A. Yamaguchi, T. Saiki, T. Tada, T. Ninomiya, K. Misawa, T. Kobayashi, M. Kuwata-Gonokami, T. Yao

研究成果: Article査読

43 被引用数 (Scopus)


We have investigated the electronic structure and the perpendicular transport properties of photoexcited carriers in a GaAs/AlAs Fibonacci superlattice (SL) with an enlarged well (EW) by means of photoluminescence excitation (PLE) spectroscopy and picosecond luminescence measurements. The PLE spectrum of the SL emission shows the structure corresponding to the subbands obtained in the Fibonacci system by splitting of the level of n=1 in the isolated well. Difference in the PLE spectrum between the SL and EW emission also shows that the only very few carriers generated in the lowest subbands in the Fibonacci SL reach the EW at 4 K, and comparison with results for a random and a periodic SL's suggests that the degree of localization in the Fibonacci SL is intermediate among the three systems. It is also found from the temporal evolution behaviors of the photoluminescence that about a half of the carriers created in higher energy states travel to EW within 50 ps and the phonon-assisted transport of the other half at 50 K in the Fibonacci and the periodic SL's is faster than that in the random SL.

ジャーナルSolid State Communications
出版ステータスPublished - 1990 9月

ASJC Scopus subject areas

  • 化学 (全般)
  • 凝縮系物理学
  • 材料化学


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