Transport properties of quantum dots with strong electron-phonon interaction

Tomoki Tasai, Mikio Eto

研究成果: Conference article査読

3 被引用数 (Scopus)

抄録

We theoretically examine the transport properties of quantum dots with strong electron-phonon interaction. When a separation between discrete electron-levels in a quantum dot matches the energy of the LO phonons, the electron-phonon interaction results in polarons, coherent states consisting of an electron and LO phonons. The Rabi splitting between two levels in the quantum dot is observable in a peak structure of the differential conductance G as a function of the bias voltage. The polaron formation suppresses the peak height of G, which is due to the competition between the resonant tunneling (resonance between a level in the dot and states in the leads) and the polaron formation (Rabi oscillation between two levels in the dot). G shows a sharp dip at the midpoint between the split peaks. This is attributable to the destructive interference between bonding and anti-bonding states in a composite system of an electron and phonons.

本文言語English
ページ(範囲)139-142
ページ数4
ジャーナルPhysica E: Low-Dimensional Systems and Nanostructures
17
1-4
DOI
出版ステータスPublished - 2003 4
イベントProceedings pf the International Conference on Superlattices - ICSNN 2002 - Touluse, France
継続期間: 2002 7 222002 7 26

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学
  • 凝縮系物理学

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