Two dimensional photonic crystal nanocavities with InAs/GaAs quantum dot active regions embedded by MBE regrowth

Quoc Huy Vo, Yasutomo Ota, Katsuyuki Watanabe, Takeo Kageyama, Satoshi Iwamoto, Yasuhiko Arakawa

研究成果: Article査読

2 被引用数 (Scopus)

抄録

We demonstrate two dimensional photonic crystal nanocavities embedding spatially-isolated active regions containing InAs/GaAs self-assembled quantum dots. We fabricated the GaAs-based structures by a combination of electron-beam lithography, dry/wet etching and crystal regrowth using molecular beam epitaxy. The fabricated nanocavity based on a photonic crystal double heterostructure supports a cavity mode with a high experimental quality factor over 10,000, despite the existence of a mound structure on the nanocavity formed during the regrowth. Using electromagnetic simulations, we discuss the origin of the cavity mode and a direction for further increasing the quality factor. The two dimensional photonic crystal nanocavities with buried quantum dot active regions will provide a useful platform for developing high performance nanolasers.

本文言語English
論文番号08PD03
ジャーナルJapanese journal of applied physics
57
8
DOI
出版ステータスPublished - 2018 8月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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