Two-exciton state in GaSb/GaAs type II quantum dots studied using near-field photoluminescence spectroscopy

K. Matsuda, S. V. Nair, H. E. Ruda, Y. Sugimoto, T. Saiki, K. Yamaguchi

研究成果: Article査読

28 被引用数 (Scopus)

抄録

The authors report on the photoluminescence spectroscopy of a single GaSbGaAs type II quantum dot (QD) at 8 K. A sharp exciton emission with a linewidth of less than 250 μeV was observed. Two-exciton emission at the higher energy side of the exciton emission indicates that the two excitons in a type II QD do not form a bound biexciton. The energies of the exciton and two-exciton states were calculated using an atomic pseudopotential model, which provides a quantitative description of the antibound nature of the two-exciton state in type II QDs.

本文言語English
論文番号013101
ジャーナルApplied Physics Letters
90
1
DOI
出版ステータスPublished - 2007

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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