Two-photon processes in defect formation by excimer lasers in synthetic silica glass

K. Arai, H. Imai, H. Hosono, Y. Abe, H. Imagawa

研究成果: Article査読

151 被引用数 (Scopus)

抄録

Defect formation in dehydrated silica glasses was investigated using various excimer lasers with different energies. The ArF laser (6.4 eV) generates the E' center more effectively than the KrF laser (5.0 eV), while the XeCl laser (4.0 eV) generated no centers. Defect generation was found to be proportional to the square of the laser photon density, indicating that it occurs dominantly due to a two-photon process which makes band-to-band excitation possible. The E' center probably originated from oxygen-deficient centers. Contributions to the E' center formation from a process involving direct absorption at the sites of intrinsic defects in SiO2 glass were discussed on the basis of the excitation energy dependence and a comparison with the effect of a low-pressure mercury lamp.

本文言語English
ページ(範囲)1891-1893
ページ数3
ジャーナルApplied Physics Letters
53
20
DOI
出版ステータスPublished - 1988
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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