Ultrafast amorphization in Ge10Sb2Te13 thin film induced by single femtosecond laser pulse

Mitsutaka Konishi, Hisashi Santo, Yuki Hongo, Kazuyuki Tajima, Masaharu Hosoi, Toshiharu Saiki

    研究成果: Article査読

    52 被引用数 (Scopus)


    We demonstrate amorphization in a Ge10Sb2Te 13 (GST) thin film through a nonthermal process by femtosecond electronic excitation. Amorphous recording marks were formed by irradiation with a single femtosecond pulse, and were confirmed to be recrystallized by laser thermal annealing. Scanning electron microscope observations revealed that amorphization occurred below the melting temperature. We performed femtosecond pump-probe measurements to investigate the amorphization dynamics of a GST thin film. We found that the reflectivity dropped abruptly within 500 fs after excitation by a single pulse and that a small change in the reflectivity occurred within 5 ps of this drop.

    ジャーナルApplied Optics
    出版ステータスPublished - 2010 6 20

    ASJC Scopus subject areas

    • Atomic and Molecular Physics, and Optics
    • Engineering (miscellaneous)
    • Electrical and Electronic Engineering

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