Ultrafast amorphization in Ge10Sb2Te13 thin film induced by single femtosecond laser pulse

Mitsutaka Konishi, Hisashi Santo, Yuki Hongo, Kazuyuki Tajima, Masaharu Hosoi, Toshiharu Saiki

研究成果: Article査読

54 被引用数 (Scopus)

抄録

We demonstrate amorphization in a Ge10Sb2Te 13 (GST) thin film through a nonthermal process by femtosecond electronic excitation. Amorphous recording marks were formed by irradiation with a single femtosecond pulse, and were confirmed to be recrystallized by laser thermal annealing. Scanning electron microscope observations revealed that amorphization occurred below the melting temperature. We performed femtosecond pump-probe measurements to investigate the amorphization dynamics of a GST thin film. We found that the reflectivity dropped abruptly within 500 fs after excitation by a single pulse and that a small change in the reflectivity occurred within 5 ps of this drop.

本文言語English
ページ(範囲)3470-3473
ページ数4
ジャーナルApplied Optics
49
18
DOI
出版ステータスPublished - 2010 6月 20

ASJC Scopus subject areas

  • 原子分子物理学および光学
  • 工学(その他)
  • 電子工学および電気工学

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