We investigate ultrafast response of optical Kerr effect (OKE) induced by excitons weakly confined in GaAs thin films. The observed decay time of optical response agrees approximately with incident pulse duration. At 100-fs pulse irradiation the response time is estimated to be 170 fs, though the exciton lifetime is about 10 ns. It is considered that the ultrafast response of OKE is caused by not population relaxation but orientation relaxation of excitons.
|ジャーナル||Physica Status Solidi (C) Current Topics in Solid State Physics|
|出版ステータス||Published - 2008 6月 30|
|イベント||15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, HCIS15 - Tokyo, Japan|
継続期間: 2007 7月 23 → 2007 7月 27
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