TY - GEN
T1 - Ultrahigh-Q silicon-on-insulator one dimensional mode-gap nanocavity
AU - Kuramochi, Eiichi
AU - Tanabe, Takasumi
AU - Taniyama, Hideaki
AU - Kawasaki, Kohei
AU - Notomi, Masaya
PY - 2010/10/11
Y1 - 2010/10/11
N2 - We reveal that a Si-wire-compatible SOI one-dimensional photonic crystal nanocavity can have a numerical Q as high as 108 with a modal volume of less than 1 (λ/n)3. An experimental Q of 360,000 is observed.
AB - We reveal that a Si-wire-compatible SOI one-dimensional photonic crystal nanocavity can have a numerical Q as high as 108 with a modal volume of less than 1 (λ/n)3. An experimental Q of 360,000 is observed.
UR - http://www.scopus.com/inward/record.url?scp=77957566476&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77957566476&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:77957566476
SN - 9781557528902
T3 - Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010
BT - Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference
T2 - Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010
Y2 - 16 May 2010 through 21 May 2010
ER -